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dc.contributor.authorRaieszadeh, Minaen_US
dc.date.accessioned2005-07-28T19:06:42Z
dc.date.available2005-07-28T19:06:42Z
dc.date.issued2005-04-12en_US
dc.identifier.urihttp://hdl.handle.net/1853/6991
dc.description.abstractThis thesis reports on a new implementation of high quality factor (Q) copper (Cu) inductors on CMOS-grade (10-20ohm.cm) silicon (Si) substrates using a fully CMOS-compatible process. A low-temperature (less than300C) fabrication sequence is employed to reduce the loss of Si wafers at RF frequencies by trenching the Si substrate. The high aspect-ratio (30:1) trenches are subsequently bridged over or refilled with a low-loss material to close the open areas and to create a rigid low-loss island (Trenched Si Island) on which the inductors can be fabricated. The method reported here does not require air suspension of the inductors, resulting in mechanically-robust structures that are compatible with any packaging technology. The metal loss of inductors is reduced by electroplating thick (~20m) Cu layer. Fabricated inductors are characterized and modeled from S-parameter measurement. Measurement results are in good agreement with SONNET electromagnetic simulations. A one-turn 0.8nH Cu inductor fabricated on a Trenched Silicon Island (TSI) exhibits high Q of 71 at 8.75 GHz. Whereas, the identical inductor fabricated on a 20um thick silicon dioxide (SiO2) coated standard Si substrate has a maximum Q of 41 at 1.95GHz. Comparing the Q of inductors on TSI with that of other micromachined Si substrates reveals the significant effect of trenching the Si in reduction of the substrate loss. This thesis outlines the design, fabrication, characterization and modeling of spiral type Cu inductors on the TSIs.en_US
dc.format.extent3064545 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectTrenched silicon islanden_US
dc.subjectLow-loss substrate
dc.subjectHigh-Q inductor
dc.subjectCMOS-compatible
dc.subject.lcshMetal oxide semiconductors, Complementaryen_US
dc.subject.lcshElectric inductorsen_US
dc.subject.lcshCopperen_US
dc.titleHigh-Q Integrated Inductors on Trenched Silicon Islandsen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.advisorCommittee Chair: Ayazi, Farrokh; Committee Member: Allen, Mark G.; Committee Member: Laskar, Joyen_US


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