Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1853/7227

Title: Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology
Author: Ahmed, Adnan
Abstract: This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge.
Type: Thesis
URI: http://hdl.handle.net/1853/7227
Date: 2005-07-19
Publisher: Georgia Institute of Technology
Subject: Heterojunction
HBT
Low-temperature
DC characteristics
SiGe
Silicon-germanium
Technology generation
Static characteristics
Cryogenic
Scaling
Silicon alloys Effect of temperature on
Germanium Effect of temperature on
Heterojunctions Effect of temperature on
Junction transistors Effect of temperature on
Low temperature engineering
Metal oxide semiconductors, Complementary Effect of temperature on
Bipolar transistors Effect of temperature on
Department: Electrical and Computer Engineering
Advisor: Committee Member: Dr. John D. Cressler; Committee Member: Dr. John Papapolymerou; Committee Member: Dr. Joy Laskar
Degree: M.S.

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