| Title: | Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology |
| Author: | Ahmed, Adnan |
| Abstract: | This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge. |
| Type: | Thesis |
| URI: | http://hdl.handle.net/1853/7227 |
| Date: | 2005-07-19 |
| Publisher: | Georgia Institute of Technology |
| Subject: |
Heterojunction
HBT Low-temperature DC characteristics SiGe Silicon-germanium Technology generation Static characteristics Cryogenic Scaling Silicon alloys Effect of temperature on Germanium Effect of temperature on Heterojunctions Effect of temperature on Junction transistors Effect of temperature on Low temperature engineering Metal oxide semiconductors, Complementary Effect of temperature on Bipolar transistors Effect of temperature on |
| Department: | Electrical and Computer Engineering |
| Advisor: | Committee Member: Dr. John D. Cressler; Committee Member: Dr. John Papapolymerou; Committee Member: Dr. Joy Laskar |
| Degree: | M.S. |
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| Ahmed_Adnan_200508_mast.pdf | 51.83Mb |
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