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dc.contributor.authorDing, Yong
dc.contributor.authorKong, Xiang Yang
dc.contributor.authorWang, Z. L. (Zhong Lin)
dc.date.accessioned2006-04-14T13:54:01Z
dc.date.available2006-04-14T13:54:01Z
dc.date.issued2004-12-06
dc.identifier.citation"Doping and Planar Defects in the Formation of Single-Crystal ZnO Nanorings", Y. Ding, X. Y. Kong and Z. L. Wang, Phys. Rev. B. 70 (2004) 235408.en
dc.identifier.urihttp://hdl.handle.net/1853/9300
dc.description.abstractWe have recently reported the growth of freestanding, single-crystal, seamless nanorings of zinc oxide via a spontaneous self-coiling process during the growth of polar-nanobelts [X.Y. Kong et al., Science 303, 1348 (2004)]. The nanoring is made by coaxial and uniradius loop-by-loop winding of a fine ZnO nanobelt. An important fact is that each and every nanoring is made of a nanobelt that contains basal-plane planar defects, which are suggested to be important for leading the fastest growth of the nanobelt as well as lowering its elastic deformation energy. In this paper, high-resolution transmission electron microscopy is applied to investigate the nature of the planar defects in the nanobelts and in nanorings. The planar defects were initiated and formed by single-layer segregation of the doping element, such as indium, which was introduced in the growth process. The accumulation of impurity ions forms two vicinal InuO octahedral layers parallel to the basal plane. They form “head-to-head” and “tail-to-tail” polar-inversion domain boundaries. For a nanobelt that self-coils into a nanoring, we found that the head-to-head and tail-to-tail polar-inversion domain boundaries are paired, thus, the polarity of the nanobelt is unchanged. Therefore, our data support the proposed model [X.Y. Kong et al., Science 303, 1348 (2004)] that the nanoring is initiated by circularly folding a nanobelt due to long-range electrostatic interaction between the surface polar charges on the two sides, and a loop-by-loop winding of the nanobelt forms a complete ring.en
dc.format.extent1376682 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectNanocrystalsen
dc.subjectNanoringsen
dc.subjectZnO nanobeltsen
dc.subjectInversion domain boundaries (IDB)en
dc.subjectPlanar defectsen
dc.titleDoping and planar defects in the formation of single-crystal ZnO nanoringsen
dc.typeArticleen


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