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dc.contributor.authorKohl, Abbe T.
dc.contributor.authorMimna, Richard
dc.contributor.authorShick, Robert
dc.contributor.authorRhodes, Larry
dc.contributor.authorWang, Z. L. (Zhong Lin)
dc.contributor.authorKohl, Paul A.
dc.date.accessioned2006-04-17T14:48:49Z
dc.date.available2006-04-17T14:48:49Z
dc.date.issued1999
dc.identifier.citation"Low-K, Porous Methylsilsesquioxane and Hydrogensilsesquioxane", A.T. Kohl, R. Shick, Z.L. Wang, and P.A. Kohl, Electrochemical and Solid-State Letters, 2 (1999) 77-79.en
dc.identifier.urihttp://hdl.handle.net/1853/9314
dc.description.abstractLow dielectric constant, porous silica was made from commercially available methyl silsesquioxane (MSQ) by the addition of a sacrificial polymer, substituted norbornene polymer containing triethoxysilyl groups (NB), to the MSQ. The silsesquioxane-NB polymer film mixture was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ exhibited a closed-pore structure. The concentration of NB in the MSQ affected the number of pores but not their size. Porous films were also created in a methyl siloxane spin-on-glass and its dielectric constant was lowered from 3.1 to 2.7. Infrared spectroscopy was used to follow the curing of the MSQ and decomposition of the NB.en
dc.format.extent147043 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectLow dielectric constant (low k)en
dc.subjectMethyl silsesquioxane (MSQ)en
dc.subjectPorous filmsen
dc.subjectSpin-on-glass (SOG) polymersen
dc.titleLow k, Porous Methyl Silsesquioxane and Spin-On-Glassen
dc.typeArticleen


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