| dc.contributor.author | Kohl, Abbe T. | |
| dc.contributor.author | Mimna, Richard | |
| dc.contributor.author | Shick, Robert | |
| dc.contributor.author | Rhodes, Larry | |
| dc.contributor.author | Wang, Z. L. (Zhong Lin) | |
| dc.contributor.author | Kohl, Paul A. | |
| dc.date.accessioned | 2006-04-17T14:48:49Z | |
| dc.date.available | 2006-04-17T14:48:49Z | |
| dc.date.issued | 1999 | |
| dc.identifier.citation | "Low-K, Porous Methylsilsesquioxane and Hydrogensilsesquioxane", A.T. Kohl, R. Shick, Z.L. Wang, and P.A. Kohl, Electrochemical and Solid-State Letters, 2 (1999) 77-79. | en |
| dc.identifier.uri | http://hdl.handle.net/1853/9314 | |
| dc.description.abstract | Low dielectric constant, porous silica was made from commercially available methyl silsesquioxane (MSQ) by the addition of a
sacrificial polymer, substituted norbornene polymer containing triethoxysilyl groups (NB), to the MSQ. The silsesquioxane-NB
polymer film mixture was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant
of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ exhibited a
closed-pore structure. The concentration of NB in the MSQ affected the number of pores but not their size. Porous films were also
created in a methyl siloxane spin-on-glass and its dielectric constant was lowered from 3.1 to 2.7. Infrared spectroscopy was used
to follow the curing of the MSQ and decomposition of the NB. | en |
| dc.format.extent | 147043 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en_US | en |
| dc.publisher | Georgia Institute of Technology | en |
| dc.subject | Low dielectric constant (low k) | en |
| dc.subject | Methyl silsesquioxane (MSQ) | en |
| dc.subject | Porous films | en |
| dc.subject | Spin-on-glass (SOG) polymers | en |
| dc.title | Low k, Porous Methyl Silsesquioxane and Spin-On-Glass | en |
| dc.type | Article | en |
