Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1853/16712

Title: Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures
Author: Og̃uzman, İsmail Hakki
Type: Dissertation
URI: http://hdl.handle.net/1853/16712
Date: 1996-08
Publisher: Georgia Institute of Technology
Subject: Semiconductors Optical properties
Photoelectric devices
Department: Electrical and Computer Engineering
Electrical Engineering
Advisor: Kevin F. Brennan
Degree: Ph.D.

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