Design and Analysis of High Power and Low Harmonic for Multi Band Wireless Application
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The objective of this research is to demonstrate the feasibility of the implementation of low-cost, small-size, and high power RF front ends using CMOS technology which has been known not to be suitable for high-power applications due to its material characteristic. One part of this research focuses on developing GaAs switches for multi band and multi mode high power applications. The development of RF front end switches for high power applications using CMOS technology is very challenging in that the characteristics of CMOS technology such as low breakdown voltages, slow electron mobility and existence of substrate junction diodes are limiting power handling capability of CMOS technology. Various topologies of CMOS switches have been employed in implementing high power RF front end CMOS switches in order to overcome material limitations of CMOS technology in high power applications. Based on measurement data such as power handling capability and S-parameters of fabricated CMOS switches, the feasibility of use of CMOS technology in high power RF antenna switch design has been studied, and novel methods of designing CMOS switches to improve the power handling capability without compensating S-parameter performance are proposed. As a part of this research, multi-band and multi-mode power switches using GaAs technology are fabricated and tested for use of the commercial applications such as handsets covering GSM, PCS/DCS, and UMTS bands. Current commercial RF switch products demand small size, low cost and low voltage control as the number of wireless standards integrated in a single application increases. This research provides a solution for commercial products which can meet all the specifications as well as needs required in the wireless market.