Interface circuit designs for extreme environments using SiGe BiCMOS technology

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dc.contributor.author Finn, Steven Ernest en_US
dc.date.accessioned 2008-06-10T20:45:19Z
dc.date.available 2008-06-10T20:45:19Z
dc.date.issued 2008-03-31 en_US
dc.identifier.uri http://hdl.handle.net/1853/22679
dc.description.abstract SiGe BiCMOS technology has many advantageous properties that, when leveraged, enable circuit design for extreme environments. This work will focus on designs targeted for space system avioinics platforms under the NASA ETDP program. The program specifications include operation under temperatures ranging from -180 C to +125 C and with radiation tolerance up to total ionizing dose of 100 krad with built-in single-event latch-up tolerance. To the author's knowledge, this work presents the first design and measurement of a wide temperature range enabled, radiation tolerant as built, RS-485 wireline transceiver in SiGe BiCMOS technology. This work also includes design and testing of a charge amplification channel front-end intended to act as the interface between a piezoelectric sensor and an ADC. An additional feature is the design and testing of a 50 Ohm output buffer utilized for testing of components in a lab setting. en_US
dc.publisher Georgia Institute of Technology en_US
dc.subject Extreme environment electronics en_US
dc.subject SiGe en_US
dc.subject BiCMOS circuits en_US
dc.subject Wireline transceiver en_US
dc.subject Space electronics en_US
dc.subject.lcsh Space environment
dc.subject.lcsh Radio--Transmitter-receivers
dc.subject.lcsh Metal oxide semiconductors, Complementary
dc.title Interface circuit designs for extreme environments using SiGe BiCMOS technology en_US
dc.type Thesis en_US
dc.description.degree M.S. en_US
dc.contributor.department Electrical and Computer Engineering en_US
dc.description.advisor Committee Chair: John D. Cressler; Committee Member: Kevin Kornegay; Committee Member: Stephen E. Ralph en_US


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