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dc.contributor.authorFinn, Steven Ernesten_US
dc.date.accessioned2008-06-10T20:45:19Z
dc.date.available2008-06-10T20:45:19Z
dc.date.issued2008-03-31en_US
dc.identifier.urihttp://hdl.handle.net/1853/22679
dc.description.abstractSiGe BiCMOS technology has many advantageous properties that, when leveraged, enable circuit design for extreme environments. This work will focus on designs targeted for space system avioinics platforms under the NASA ETDP program. The program specifications include operation under temperatures ranging from -180 C to +125 C and with radiation tolerance up to total ionizing dose of 100 krad with built-in single-event latch-up tolerance. To the author's knowledge, this work presents the first design and measurement of a wide temperature range enabled, radiation tolerant as built, RS-485 wireline transceiver in SiGe BiCMOS technology. This work also includes design and testing of a charge amplification channel front-end intended to act as the interface between a piezoelectric sensor and an ADC. An additional feature is the design and testing of a 50 Ohm output buffer utilized for testing of components in a lab setting.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectExtreme environment electronicsen_US
dc.subjectSiGeen_US
dc.subjectBiCMOS circuitsen_US
dc.subjectWireline transceiveren_US
dc.subjectSpace electronicsen_US
dc.subject.lcshSpace environment
dc.subject.lcshRadio--Transmitter-receivers
dc.subject.lcshMetal oxide semiconductors, Complementary
dc.titleInterface circuit designs for extreme environments using SiGe BiCMOS technologyen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.advisorCommittee Chair: John D. Cressler; Committee Member: Kevin Kornegay; Committee Member: Stephen E. Ralphen_US


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