Epitaxial growth of BaTiO₃ thin films at 600 °C by metalorganic chemical vapor deposition

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Title: Epitaxial growth of BaTiO₃ thin films at 600 °C by metalorganic chemical vapor deposition
Author: Kaiser, D. L. ; Vaudin, M. D. ; Rotter, L. D. ; Wang, Z. L. (Zhong Lin) ; Cline, J. P. ; Hwang, C. S. ; Marinenko, R. B. ; Gillen, J. G.
Abstract: BaTiO₃ thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO₃ films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate.
Description: ©1995 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?APPLAB/66/2801/1
Type: Article
URI: http://hdl.handle.net/1853/27235
ISSN: 0003-6951
Citation: Applied Physics Letters, 66 (1995) 2801-2803
Date: 1995-05-22
Contributor: National Institute of Standards and Technology (U.S.)
Publisher: Georgia Institute of Technology
American Institute of Physics
Subject: Barium titanates
Chemical vapor deposition
Epitaxial layers
X-ray spectroscopy
Interface structure

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