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dc.contributor.authorde Heer, Walt A.
dc.date.accessioned2009-12-04T18:19:45Z
dc.date.available2009-12-04T18:19:45Z
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/1853/31270
dc.descriptionNote: Some personal information has been removed; original documents are available upon request.en
dc.description.abstractGraphene has recently emerged as a material likely to complement or eventually succeed silicon in electronics. From 2001 to 2004, groundbreaking research was pursued behind the scenes at Georgia Tech; various directions were explored, including exfoliation techniques and CVD growth, but epitaxial graphene on silicon carbide emerged as the most viable route. This document provides archival information that may otherwise be difficult to obtain, including two proposals on file with the NSF, submitted in 2001 and 2003, and the first graphene patent, filed in 2003. The 2001 document proposes much of the graphene research carried out during this decade, and the 2003 proposal includes the data that was eventually published in J. Phys. Chem. B in Dec. 2004.en
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectGrapheneen
dc.subjectEpitaxial grapheneen
dc.subjectGraphene researchen
dc.titleEarly Development of Graphene Electronicsen
dc.typeTechnical Reporten
dc.contributor.corporatenameGeorgia Institute of Technology. School of Physics
dc.contributor.corporatenameGeorgia Institute of Technology. Epitaxial Graphene Lab


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